MOCVD – Metal-organic Chemical Vapor Deposition
During MOCVD film growth, the carrier gas is primarily passed through the container of the metal-organic reaction source. The saturated vapor of the reaction source is then brought into the reaction chamber, mixed with other reaction gases, and undergoes a chemical reaction on the heated substrate to facilitate film growth.
The substrate holder inside the MOCVD reaction chamber, which carries the chips, needs to have characteristics such as high temperature resistance, uniform thermal conductivity, good chemical stability, and strong resistance to thermal shock. Graphite materials precisely meet these requirements.
The base used in the MOCVD process can be applied to applications such as Gallium Nitride (GaN), GaN on Si, Gallium Arsenide (GaAs), Indium Phosphide (InP), etc. Major products manufactured in this process include display backlight sources.
Silicon carbide cover plates and carriers in the MOCVD reaction chamber are commonly used in compound semiconductor epitaxial growth processes.
Guiding flat airflow discharge.
Collecting gas guides to exhaust holes.
During MOCVD reactions, the silicon carbide cover prevents temperature differences between the cover and the chamber and prevents coating from falling onto the deposited material.
Wafer graphite carriers are available in sizes: 4″, 6″, 8″, and can be customized.
In the preparation of the chamber environment before the production cycle or when testing a RUN with less than a full load, Dummy Wafers are used to fill the space. This helps avoid deposition material attachment to the susceptor during the epitaxial process. The special grid design utilizes different planes to increase the direction of deposition, not only increasing the number of RUNs but also reducing warping occurrences.
Donec vitae lacus vel ligula hendrerit viverra non non orci. Quisque sed tincidunt sapien. Maecenas gravida at velit feugiat vulputate.
Join us in shaping a more innovative and reliable future!
